Pade-Approximation Based Behavioral Modeling for RF Power Amplifier Design

Radio frequency (RF) power amplifier (PA) design using Gallium Nitride (GaN) transistor technology requires accurate device models in order to maximise performance and reduce development time. The current state-of-the-art frequency-domain behavioural focus on linear quadratic approximations the polyharmonic distortion (PHD) formalism. However, approximation suffers from poor accuracy under load mismatch conditions, while extrapolation beyond measured range, leading erroneous predictions of optimum impedances for maximum output drain efficiency. In this work, a rational Padé-based is proposed as model core, it shown, through experimental validation, that Padé approximation-based can provide superior results more scalable format. It mitigate problems found existing PHD when applied matching problem. Specifically, produces fewer solutions points, due well-behaved nature approximants. addition, first time, are reported determine impedance transducer gain two-port model. All show has high potential compared established PHD-derived RF PA design.